Aluminum Nitride Ceramic Substrate For IGBT Power Modules

Aluminum Nitride Ceramic Substrate For IGBT Power Modules Product Overview Puwei Ceramic's Aluminum Nitride Ceramic Substrate for IGBT Power Modules represents the pinnacle of thermal management technology for high-power electronics. Engineered specifically for Insulated-Gate Bipolar Transistor applications, these advanced substrates deliver exceptional thermal conductivity and electrical insulation to ensure reliable performance in demanding power conversion systems. Core Performance Advantages Exceptional Thermal Conductivity: 170-230 W/(m·K) for superior heat dissipation Excellent Electrical Insulation: Volume resistivity >10¹⁴ Ω·cm and high dielectric strength Superior Mechanical Strength: Withstands mechanical stress, vibration, and thermal cycling Optimized CTE Matching: Thermal expansion coefficient matches silicon semiconductors Advanced Metallization Options: DPC, DBC, TPC, AMB, and thick/thin film printing Our AlN ceramic substrates effectively dissipate heat generat…